发明名称 |
Memory bus architecture for concurrently supporting volatile and non-volatile memory modules |
摘要 |
A memory/storage module is provided that implements a solid state drive compatible with Serial Advanced Technology Attachment (SATA) or Serial Attached SCSI (SAS) signaling on a double-data-rate compatible socket. A detachable daughter card may be coupled to the memory module for converting a memory bus voltage to a second voltage for memory devices on the memory module. Additionally, a hybrid memory bus on a host system is provided that supports either DDR-compatible memory modules and/or SATA/SAS-compatible memory modules. In one example, the memory/storage module couples to a first bus (DDR3 compatible socket) to obtain voltage and/or other signals, but uses a second bus for data transfers. In another example, the memory module may repurpose/reuse electrical paths that typically carry non-data signals for data traffic to/from the memory/storage module. Such data traffic for the memory/storage module permits concurrent data traffic for other memory modules on the same memory bus. |
申请公布号 |
US8656072(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201113236416 |
申请日期 |
2011.09.19 |
申请人 |
HINKLE JONATHAN R.;SWEERE PAUL;SANMINA-SCI CORPORATION |
发明人 |
HINKLE JONATHAN R.;SWEERE PAUL |
分类号 |
G06F3/00;G06F5/00;G06F13/20;H05K7/10 |
主分类号 |
G06F3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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