| 摘要 |
A semiconductor device including a plurality of circuits that includes a transistor, where a semiconductor layer forming the transistor includes a first contact pad, a first part that is connected to the first contact pad and that extends in a direction intersecting a short direction of a pitch with which the circuits are arranged, a second part that extends from the first part in the short direction, and a second contact pad including the first part and the second part that are provided between the first contact pad and the second contact pad, where the second part overlaps an electrode layer across an insulating layer. |
