发明名称 Photoresist composition and method of forming pattern by using the same
摘要 A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. and R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.
申请公布号 US8652749(B2) 申请公布日期 2014.02.18
申请号 US201113037212 申请日期 2011.02.28
申请人 LEE HI-KUK;YUN SANG-HYUN;KIM CHA-DONG;PARK JUNG-IN;KANG DEOK-MAN;KIM YOUN-SUK;OH SAE-TAE;SAMSUNG DISPLAY CO., LTD.;AZ ELECTRONIC MATERIALS (KOREA) LTD. 发明人 LEE HI-KUK;YUN SANG-HYUN;KIM CHA-DONG;PARK JUNG-IN;KANG DEOK-MAN;KIM YOUN-SUK;OH SAE-TAE
分类号 G03F7/023;G03F7/30 主分类号 G03F7/023
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