发明名称 Liquid treatment method and storage system
摘要 A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.
申请公布号 US8652344(B2) 申请公布日期 2014.02.18
申请号 US20090403286 申请日期 2009.03.12
申请人 TSURUSAKI KOTARO;TANAKA HIROSHI;TOSHIMA TAKAYUKI;ESHIMA KAZUYOSHI;TOKYO ELECTRON LIMITED 发明人 TSURUSAKI KOTARO;TANAKA HIROSHI;TOSHIMA TAKAYUKI;ESHIMA KAZUYOSHI
分类号 B44C1/22;C23F1/08;H01L21/00;H01L21/304 主分类号 B44C1/22
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