发明名称 |
Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition |
摘要 |
One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors. |
申请公布号 |
US8652259(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US20090355463 |
申请日期 |
2009.01.16 |
申请人 |
POPPE STEVE;ROZENZON YAN;CHEN DAVID Z.;YAN XIAOLE;DING PEIJUN;XU ZHENG;SILEVO, INC. |
发明人 |
POPPE STEVE;ROZENZON YAN;CHEN DAVID Z.;YAN XIAOLE;DING PEIJUN;XU ZHENG |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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