发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>The present invention relates to a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes sub patterns formed on a semiconductor substrate, gate line patterns arranged in parallel on the semiconductor substrate between the sub patterns, and an air gap formed in a space between the sub patterns and the gate line patterns, and in a space between the gate line patterns.</p> |
申请公布号 |
KR20140020149(A) |
申请公布日期 |
2014.02.18 |
申请号 |
KR20120086886 |
申请日期 |
2012.08.08 |
申请人 |
SK HYNIX INC. |
发明人 |
KIM, TAE KYUNG;KWON, HYUN YUL |
分类号 |
H01L27/115;H01L21/31;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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