| 摘要 |
The method involves forming a mask that defines exposed regions of thin semiconductor layer (3). A heat treatment is applied to a structure in inert/reducing atmosphere and under controlled temperature and time conditions, so that oxygen in semiconductor oxide/oxynitride layer (2) diffuses via the regions and reduces thickness of the layer. A thin nitride/oxynitride layer is formed on the regions, where thickness of the thin nitride/oxynitride layer is such that a ratio between rates of oxygen diffusion via the regions and mask covered regions is greater than/equal to 2. |
