METHOD FOR FORMING CU WIRING AND STORAGE MEDIUM

摘要

The present invention provides a method for forming Cu wiring capable of obtaining the Cu wiring having electromigration tolerance without generating void and without complex processes or the increase of leakage current between wiring. The present invention comprises the process of forming a barrier film at the front surface of a wafer W having a trench; the process of forming a Ru film on the barrier film; the process of embedding the Cu film at the trench by forming the Cu film with PVD on the Ru film; the process of forming an additional layer on the Cu layer; the process of forming the Cu wiring on the trench by polishing the front surface with CMP; the process of forming a metal cap composed with a manganese oxide film at the front surface of the wafer W; and the process of forming a dielectric cap on the metal cap.