发明名称 |
Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters |
摘要 |
A nonvolatile memory device comprises a nonvolatile cell array comprising a memory cell and a reference cell, a clamping circuit electrically connected to the memory cell and configured to clamp a voltage applied to a data sensing line during a read operation, and a clamping voltage generation unit configured to generate a clamping voltage responsive to a first voltage having a level based on the reference cell, and to feed back the clamping voltage to the clamping circuit. |
申请公布号 |
US8654595(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201213604688 |
申请日期 |
2012.09.06 |
申请人 |
KIM CHAN-KYUNG;HWANG HONG-SUN;PARK CHUL-WOO;KANG SANG-BEOM;OH HYUNG-ROK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHAN-KYUNG;HWANG HONG-SUN;PARK CHUL-WOO;KANG SANG-BEOM;OH HYUNG-ROK |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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