| 摘要 |
The present invention relates to a semiconductor device and a fabricating method thereof. According to the embodiment of the present invention, a semiconductor device includes a semiconductor substrate, a P well region and an N wall region formed on the semiconductor substrate, a gate insulating layer formed in the P well region and the N wall region of which thicknesses are different, a gate electrode formed on the gate insulating layer, a source region formed on the P wall region, a drain region formed on the N wall region, a P wall pickup region formed on the P wall region, a gate electrode on the N wall region, and a field relaxation oxide layer formed between the gate electrode the grain region on the N wall region. |
