发明名称 |
Nonvolatile memory device including a channel pad having a channel extending portion and a spacer and method of manufacturing the same |
摘要 |
A nonvolatile memory device having a vertical structure and a method of manufacturing the same, the nonvolatile memory device including a channel region that vertically extends from a substrate; gate electrodes on the substrate, the gate electrodes being disposed along an outer side wall of the channel region and spaced apart from one another; and a channel pad that extends from one side of the channel region to an outside of the channel region, the channel pad covering a top surface of the channel region. |
申请公布号 |
US8653585(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201213404047 |
申请日期 |
2012.02.24 |
申请人 |
YOUM EUN-SUN;PARK SANG-YONG;PARK JIN-TAEK;KIM YONG-TOP;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOUM EUN-SUN;PARK SANG-YONG;PARK JIN-TAEK;KIM YONG-TOP |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|