发明名称 |
Variable resistance memory devices and methods of manufacturing the same |
摘要 |
According to example embodiments, a variable resistance memory device include an ohmic pattern on a substrate; a first electrode pattern including a first portion that has a plate shape and contacts a top surface of the ohmic pattern and a second portion that extends from one end of the first portion to a top; a variable resistance pattern electrically connected to the first electrode pattern; and a second electrode pattern electrically connected to the variable resistance pattern, wherein one end of the ohmic pattern and the other end of the first portion are disposed on the same plane. |
申请公布号 |
US8653493(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201213369662 |
申请日期 |
2012.02.09 |
申请人 |
KANG MYUNG JIN;HWANG YOUNGNAM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG MYUNG JIN;HWANG YOUNGNAM |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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