发明名称 Charge pump control scheme for memory word line
摘要 A memory includes a word line, a charge pump coupled to the word line, and a charge pump control circuit coupled to the charge pump. The charge pump control circuit is configured to turn on the charge pump if the word line voltage is lower than a first threshold voltage and turn off the charge pump if the word line voltage is higher than a second threshold voltage.
申请公布号 US8654589(B2) 申请公布日期 2014.02.18
申请号 US20100970123 申请日期 2010.12.16
申请人 YU HUNG-CHANG;CHIH YUE-DER;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YU HUNG-CHANG;CHIH YUE-DER
分类号 G11C7/00 主分类号 G11C7/00
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