发明名称 |
Charge pump control scheme for memory word line |
摘要 |
A memory includes a word line, a charge pump coupled to the word line, and a charge pump control circuit coupled to the charge pump. The charge pump control circuit is configured to turn on the charge pump if the word line voltage is lower than a first threshold voltage and turn off the charge pump if the word line voltage is higher than a second threshold voltage. |
申请公布号 |
US8654589(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US20100970123 |
申请日期 |
2010.12.16 |
申请人 |
YU HUNG-CHANG;CHIH YUE-DER;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU HUNG-CHANG;CHIH YUE-DER |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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