Low voltage write time enhanced SRAM cell and circuit extensions

摘要

A memory cell is formed by storage latch coupled between a true bit line node and a complement bit line node. The latch has an internal true node and an internal complement node. The cell additionally includes a first transistor that is source-drain coupled between the internal true node and a word line node. A control terminal of the first transistor is coupled to receive a signal from the complement bit line node and functions to source current into the true node during write mode. The cell further includes a second transistor that is source-drain coupled between the internal complement node and the word line node. A control terminal of the second transistor is coupled to receive a signal from the true bit line node and functions to source current into the complement node during write mode.