发明名称 |
Methods of fabricating semiconductor devices using preliminary trenches with epitaxial growth |
摘要 |
A method of fabricating a semiconductor device can be provided by etching sidewalls of a preliminary trench in a substrate that are between immediately adjacent gate electrode structures, to recess the sidewalls further beneath the gate electrode structures to provide recessed sidewalls. Then, the recessed sidewalls and a bottom of the preliminary trench can be etched using crystallographic anisotropic etching to form a hexagonally shaped trench in the substrate. |
申请公布号 |
US8652915(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201113212380 |
申请日期 |
2011.08.18 |
申请人 |
AHN KEVIN;PARK SANG-JINE;BAEK JAE-JIK;YOON BO-UN;HAN JEONG-NAM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN KEVIN;PARK SANG-JINE;BAEK JAE-JIK;YOON BO-UN;HAN JEONG-NAM |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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