发明名称 |
Multi-layer structures and process for fabricating semiconductor devices |
摘要 |
The present invention relates to a method for providing a Silicon-On-Insulator (SOI) stack that includes a substrate layer, a first oxide layer on the substrate layer and a silicon layer on the first oxide layer (BOX layer). The method includes providing at least one first region of the SOI stack wherein the silicon layer is thinned by thermally oxidizing a part of the silicon layer and providing at least one second region of the SOI stack wherein the first oxide layer (BOX layer) is thinned by annealing. |
申请公布号 |
US8652887(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201213416813 |
申请日期 |
2012.03.09 |
申请人 |
NGUYEN BICH-YEN;MAZURE CARLOS;FERRANT RICHARD;SOITEC |
发明人 |
NGUYEN BICH-YEN;MAZURE CARLOS;FERRANT RICHARD |
分类号 |
H01L21/00;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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