发明名称 Heating phase change material
摘要 A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heat
申请公布号 US8653495(B2) 申请公布日期 2014.02.18
申请号 US20050103188 申请日期 2005.04.11
申请人 WICKER GUY C.;PELLIZZER FABIO;VARESI ENRICO;PIROVANO AGOSTINO;MICRON TECHNOLOGY, INC. 发明人 WICKER GUY C.;PELLIZZER FABIO;VARESI ENRICO;PIROVANO AGOSTINO
分类号 H01L21/06;H01L45/00 主分类号 H01L21/06
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