Disclosed is a high electron mobility transistor. The high electron mobility transistor includes a channel supply layer inducing a 2D electron gas on a channel layer, a source electrode and a drain electrode formed in both sides of the channel supply layer, and a deflation formation layer formed on the channel supply layer to form a deflation region in the 2D electron gas and touching the source electrode.
申请公布号
KR20140020043(A)
申请公布日期
2014.02.18
申请号
KR20120086396
申请日期
2012.08.07
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
JEON, WOO CHUL;KIM, JONG SEOB;PARK, KI YEOL;PARK, YOUNG HWAN;SHIN, JAI KWANG;OH, JAE JOON;HA, JONG BONG;HWANG, SUN KYU