发明名称 HPC optimization of contacts to optoelectronic devices
摘要 HPC techniques are applied to the screening and evaluating the materials, process parameters, process sequences, and post deposition treatment processes for the development of ohmic contact stacks for optoelectronic devices. Simple test structures are employed for initial screening of basic materials properties of candidate materials for each layer within the stack. The use of multiple site-isolated regions on a single substrate allows many material and/or process conditions to be evaluated in a timely and cost effective manner. Interactions between the layers as well as interactions with the substrate can be investigated in a straightforward manner.
申请公布号 US8652861(B1) 申请公布日期 2014.02.18
申请号 US201213722744 申请日期 2012.12.20
申请人 INTERMOLECULAR, INC. 发明人 KRAUS PHILIP;NIJHAWAN SANDEEP
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址