发明名称 |
Current control semiconductor element and control device using the same |
摘要 |
This invention provides a current control semiconductor element in which dependence of a sense ratio on a temperature distribution is eliminated and the accuracy of current detection using a sense MOSFET can be improved, and to provide a control device using the current control semiconductor element. The current control semiconductor element 1 includes a main MOSFET 7 that drives a current and a sense MOSFET 8 that is connected to the main MOSFET in parallel and detects a current shunted from a current of the main MOSFET. The main MOSFET is formed using a multi-finger MOSFET that has a plurality of channels and is arranged in a row. When a distance between the center of the multi-finger MOSFET 7 and a channel located farthest from the center of the multi-finger MOSFET 7 is indicated by L, a channel that is located closest to a position distant by a distance of (L/(√3)) from the center of the multi-finger MOSFET is used as a channel for the sense MOSFET 8. |
申请公布号 |
US8653601(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201113807278 |
申请日期 |
2011.06.02 |
申请人 |
HIROTSU TEPPEI;KANEKAWA NOBUYASU;TANABE ITARU;HITACHI AUTOMOTIVE SYSTEMS, LTD. |
发明人 |
HIROTSU TEPPEI;KANEKAWA NOBUYASU;TANABE ITARU |
分类号 |
H01L21/8234;H01L29/76;H02M3/24 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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