| 摘要 |
The present invention relates to a method for manufacturing a semiconductor device by using a heat-resistant adhesive sheet of an energy ray reactive type and more specifically, to a method for manufacturing a semiconductor device by using a heat-resistant adhesive sheet of an energy ray reactive type having excellent reliable operation which is capable of performing the peeling without residues on a metal lead frame and sealing resin surface as the heat-resistant adhesive sheet of the energy ray reactive type is attached after a mounting process in which is exposed at high temperatures for a long period of time (Post-tape process) and energy ray irradiation relative to the heat-resistant adhesive sheet of the energy ray reactive type is performed after completing a sealing step for introducing cross-linking reaction, capable of easily laminating the adhesive sheet and the metal lead frame by the high adhesion or wettability of the heat-resistant adhesive sheet of the energy ray reactive type before irradiating the energy, and capable of remarkably preventing the resin from discharging in the sealing step by the high adhesion or wettability of an adhesive layer. [Reference numerals] (AA) Pre-tape process figure; (BB) Post-tape process figure; (CC) Conventional process[figure 1]; (DD) Conventional process[figure 2]; (EE) Process of the present invention [figure 3]; (GG) Adhesive sheet laminate process; (HH,MM,SS) Die attach process; (II,NN,TT) Wire bonding process; (JJ,PP,VV) Epoxy molding process; (KK,QQ,XX) Adhesive sheet removing process; (LL,RR,FF) Lead frame preparing process; (OO,UU) Adhesive sheet lamination process; (WW) Light radiation process; (XX) Adhesive sheet removing process |
