发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
摘要 The purpose of the present invention is to improve heat emitting properties of a semiconductor device. The semiconductor device (10) includes an insulation layer (21); a first semiconductor device (22) embedded in the insulation layer (21); and a second semiconductor device (23). A semiconductor device (10) also includes a frame (24) having higher heat conductivity than the insulation layer (21) and enclosing the first semiconductor device (22) and the second semiconductor device (23) by including the insulation layer (21). A wiring layer (30) including a conductive unit (31) electrically connected to the first semiconductor device (22) and the second semiconductor device (23) is installed on the upper part of the insulation layer (21). The frame (24) is installed around the first semiconductor device (22) and the second semiconductor device (23) in the insulation layer (21) so that the heat emitting properties of the semiconductor device (10) can be improved.
申请公布号 KR20140020345(A) 申请公布日期 2014.02.18
申请号 KR20140012240 申请日期 2014.02.03
申请人 FUJITSU LIMITED 发明人 KON JUNICHI
分类号 H01L23/522 主分类号 H01L23/522
代理机构 代理人
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