| 摘要 |
<p>The present technique includes a step of forming a pipe gate where a sacrificial layer is buried; a step of forming a lamination structure by alternately laminating a first and a second material layer on the upper part of the pipe gate; a step of forming a channel hole opening the sacrificial layer by etching the lamination structure; a step of forming a charge storage layer pattern at the sidewall of the channel hole; a step of removing the sacrificial layer; and a step of forming a gate insulating layer along the surface of the charge storage layer pattern and a region where the sacrificial layer is removed.</p> |
