发明名称 Timing margins for on-chip variations from sensitivity data
摘要 An approach is provided in which a system executes transistor-level circuit simulation of a standard cell that includes parameters corresponding to a semiconductor manufacturing technology process. Sensitivity data is collected that quantifies changes to performance metrics corresponding to the standard cell in response to adjusting one or more of the parameters during the transistor-level circuit simulation. In turn, the system generates derate factors based upon the sensitivity data and tests an integrated circuit design according to the derate factors. Testing the integrated circuit design includes performing static timing analysis on the integrated circuit design that simulates operation of a device built from the integrated circuit design using the semiconductor technology process. In one embodiment, when the static timing analysis indicates timing violations, the system dynamically generates custom derate factors for particular cell instances corresponding to the timing violations. In turn, subsequent timing analysis is performed using the custom derate factors.
申请公布号 US8656331(B1) 申请公布日期 2014.02.18
申请号 US201313767064 申请日期 2013.02.14
申请人 SUNDARESWARAN SAVITHRI;VEERARAGHAVAN SURYA;FREESCALE SEMICONDUCTOR, INC. 发明人 SUNDARESWARAN SAVITHRI;VEERARAGHAVAN SURYA
分类号 G06F17/50 主分类号 G06F17/50
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