发明名称 |
Thin film transistor and thin film transistor array panel |
摘要 |
Provided is a thin film transistor and thin film transistor panel array. The thin film transistor includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate and partially overlapping with the gate electrode; a source electrode and a drain electrode spaced apart from each other with respect to a channel region of the semiconductor layer; an insulating layer disposed between the gate electrode and the semiconductor layer; and a barrier layer disposed between the semiconductor layer and the source electrode and between the semiconductor layer and the drain electrode, in which the barrier layer comprises graphene. An ohmic contact is provided based on the type of material used for the semiconductor layer. |
申请公布号 |
US8653515(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201213367076 |
申请日期 |
2012.02.06 |
申请人 |
LEE YONG-SU;KHANG YOON HO;YU SE HWAN;CHANG CHONG SUP;SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE YONG-SU;KHANG YOON HO;YU SE HWAN;CHANG CHONG SUP |
分类号 |
H01L29/10 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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