| 摘要 |
PURPOSE: A nitride semiconductor light emitting device and a method for manufacturing the same are provided to maximize reflection efficiency by using a distributed bragg reflector for reflecting light. CONSTITUTION: A reflection layer pattern (12) is formed on a substrate having a lattice structure. A buffer layer (13) is formed on the reflection layer pattern. A semiconductor layer (14,15,16) has a PN junction. The PN junction is formed on a buffer layer. A first refraction layer and a second refraction layer are alternately laminated. |
