GAN SEMICONDUCTOR PACKAGE FOR HIGH POWER AMPLIFIER AND METHOD THE SAME

摘要

A GaN semiconductor package for a high power amplifier and a method thereof are disclosed. According to one embodiment of the present invention, the GaN semiconductor package for a high power amplifier includes a base substrate; a ceramic ring that is formed on the upper part of the base substrate and has a mounting part on a center part; a pair of package lid touching the ceramic ring; a GaN semiconductor chip for a high power amplifier mounted on the mounting part; at least one AIN substrate arranged around the GaN semiconductor chip; and a metal wire connecting the package lid to the AIN substrate and the AIN substrate to the GaN semiconductor substrate.