发明名称 |
APPARATUS AND METHOD FOR MASKLESS PATTERNED IMPLANTATION |
摘要 |
A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level. |
申请公布号 |
KR20140019791(A) |
申请公布日期 |
2014.02.17 |
申请号 |
KR20137026214 |
申请日期 |
2012.02.28 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
LEAVITT CHRISTOPHER J.;GODET LUDOVIC;MILLER TIMOTHY J. |
分类号 |
H01J37/317;H01J37/302;H01J37/32 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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