| 摘要 |
<p>The present invention provides oxide semiconductor materials achieving mobility of more than 5cm2/Vs required for operation of an OLED display device and stability (in PBS and NBIS, within threshold voltage shift rate (ΔVth)=±3V) of a threshold voltage (Vth) without generating problems in which a selection ratio is small so that creation for a channel etch structure can be difficult and which is generated when a protective film causing a loss of oxygen is formed on a film; a sputtering target using the oxide semiconductor materials; a protective film of a TFT; and an oxygen semiconductor device using the same. the oxide semiconductor target is formed as the oxide semiconductor material that any one, two or more among W, Ta, and Hf in 5d transition metal oxide are added to the semiconductor materials consisting of Zn-Sn-O as a main material within an individual range of 0.07 to 3.8 atomic%, 0.5 to 4.7 atom%, and 0.32 to 6.4 atomic% is sintered. The present invention relates to the oxygen semiconductor target, a semiconductor channel layer formed by using the target, the oxygen semiconductor material for a TFT protective layer, and the semiconductor device having the same.</p> |
