| 摘要 |
A near-ultra violet light emitting diode with a barrier layer of a super lattice structure is provided to reduce crystal defects in an active region by employing the barrier layer of the super lattice. A near-ultra violet light emitting diode has an active region between an N-type compound semiconductor layer(57) and a P-type compound semiconductor layer(61). The active region includes well layers(59a) and barrier layers(59b) of a super lattice structure. The near-ultra violet light emitting diode emits a neat-ultra violet light of 360 to 410 nm wave length. The well layer is formed with InGaN. The barrier layer is the super lattice structure in which InGaN and GaN are alternatively layered. InGaN of the well layer contains In more than InGaN of the barrier layer. The well layer is formed with InxGa(1-x)N. The barrier layer includes a lower super lattice, an upper lattice, and an intermediate super lattice. The lower super lattice is made of InyGa(1-y)N and GaN which are alternatively layered. The upper super lattice is made of InGa(1-y)N and GaN which are alternatively layered. The intermediate super lattice is interposed between the lower super lattice and the upper super lattice and has InzGa(1-z)N and GaN which are alternatively layered. |
