| 摘要 |
A plasma etching method and a plasma etching apparatus are provided to quickly etch away pollutants from a surface of a semiconductor substrate by etching away the pollutants from upper, side, lower, and rear surfaces of the semiconductor substrate at the same time in the same space. A plasma etching apparatus includes a chamber(10), a stage(12), a first electrode(14), a lower second electrode(16), and an upper second electrode(18). The stage is installed in the chamber. High frequency energy for generating plasma is applied on the stage. The first electrode is arranged on the stage. An upper portion of the first electrode supports a center portion of a rear surface of the semiconductor substrate. The lower second electrode lifts up the semiconductor substrate, which is placed on the first electrode, and surrounds the stage, such that an edge portion of the rear surface of the semiconductor substrate is supported. The upper second electrode is arranged to face the stage. |
