| 摘要 |
Disclosed is a light emitting device having an electron blocking layer formed a pattern. The light emitting device according to an embodiment comprises: a first conductive semiconductor layer; a second conductive semiconductor layer; and an activating layer between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the second conductive semiconductor layer includes the electron blocking layer located adjacent to the activating layer and a second conductive cladding layer on the electron blocking layer. The electron blocking layer includes a first region having a plurality of patterns apart from each other and a second region location between the first region. |
