| 摘要 |
A semiconductor component that includes a Schottky device, an edge termination structure, a non-Schottky semiconductor device, combinations thereof and a method of manufacturing the semiconductor component. A semiconductor material includes a first epitaxial layer disposed on a semiconductor substrate and a second epitaxial layer disposed on the first epitaxial layer. The second epitaxial layer has a higher resistivity than the semiconductor substrate. A Schottky device and a non-Schottky semiconductor device are manufactured from the second epitaxial layer. In accordance with another embodiment, a semiconductor material includes an epitaxial layer disposed over a semiconductor substrate. The epitaxial layer has a higher resistivity than the semiconductor substrate. A doped region is formed in the epitaxial layer. A Schottky device and a non-Schottky semiconductor device are manufactured from the epitaxial layer. |
