发明名称 |
SILICON ON INSULATOR STRUCTURES HAVING HIGH RESISTIVITY REGIONS IN THE HANDLE WAFER AND METHODS FOR PRODUCING SUCH STRUCTURES |
摘要 |
Silicon on insulator structures having a high resistivity region in the handle wafer of the silicon on insulator structure are disclosed. Methods for producing such silicon on insulator structures are also provided. Exemplary methods involve creating a non-uniform thermal donor profile and/or modifying the dopant profile of the handle wafer to create a new resistivity profile in the handle wafer. Methods may involve one or more SOI manufacturing steps or electronic device (e.g., RF device) manufacturing steps. |
申请公布号 |
KR20140019350(A) |
申请公布日期 |
2014.02.14 |
申请号 |
KR20137024403 |
申请日期 |
2012.03.13 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
LIBBERT JEFFREY L.;FEI LU;STANDLEY ROBERT W. |
分类号 |
H01L21/762;H01L21/02 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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