| 摘要 |
<p>The present invention relates to a method for purifying silicon, comprising at least the following steps: c) providing a container (1) that comprises silicon (10) in molten state, the container (1) having a longitudinal axis (X) and the silicon (10) in molten state defining a free surface (11) on the side opposite the bottom (4) of the container (1); d) imposing on the silicon (10) in molten state conditions that are favourable for the solidification thereof, the mean temporal velocity for the duration of step b) of propagating the solidification front (13) of the silicon, measured along the longitudinal axis (X) of the container (1), being no lower than 5μm/s, preferably 10μm/s; said method being characterised in that at least one stirring system (30) imposes, during all or part of step b), a flow of silicon (10) in molten state with a Reynolds number comprised between 3 104 and 3 106, preferably between 105 and 106.</p> |
