发明名称 PROCEDE DE FABRICATION D'UN EMPILEMENT MOS SUR UN SUBSTRAT EN DIAMANT
摘要 <p>The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.</p>
申请公布号 FR2984595(B1) 申请公布日期 2014.02.14
申请号 FR20110062052 申请日期 2011.12.20
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITE JOSEPH FOURIER 发明人 CHICOT GAUTHIER;MARECHAL AURELIEN;MURET PIERRE;PERNOT JULIEN
分类号 H01L21/334 主分类号 H01L21/334
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