| 摘要 |
PROBLEM TO BE SOLVED: To avoid, when a polycrystalline silicon rod is monocrystallized based on the FZ method, the occurrence of dislocation and to execute a stable control at the time of monocrystallization.SOLUTION: The polycrystalline silicon rod 11 comprises a seed bar 11a consisting of polycrystalline silicon and polycrystalline silicon deposits 11b deposited on the outer circumferential plane of the seed bar 11a based on the CVD method. This polycrystalline silicon rod 11 has a diameter of 77 mm or below and is constituted so as to reveal, when a cross section of the polycrystalline silicon rod 11 perpendicular intersecting the axial line of the seed bar 11a is observed under an optical microscope, a homogeneous radial distribution of acicular crystals having lengths of 288 μm or below around the seed bar 11a sheathed by the polycrystalline silicon deposits 11b. Moreover, the occupant area ratio of the acicular crystals on the cross section is 78% or above. |
