| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a spin valve tunnel magnetoresistive element which can be made compact while enhancing thermal stability, and in which high magnetic anisotropy can be given to the magnetic layer thereof.SOLUTION: In the method of manufacturing a spin valve tunnel magnetoresistive element where an antiferromagnetic layer, a first magnetization fixed layer, a nonmagnetic layer for exchange coupling, a second magnetization fixed layer, a tunnel barrier layer, and a magnetization free layer are laminated in order on a substrate, sputter deposition of a magnetic layer on the substrate is performed by making sputter particles impinge on the substrate obliquely from a certain incident direction at a certain incident angle, while turning the substrate, by using a sputtering target for making the sputter particles impinge on the substrate from an oblique direction. |
