| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit current concentration at or around a corner of a gate trench and which can be simply formed, and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: forming an N-type drain region 4 in a base layer of an epitaxial layer 3; forming a gate trench 6 in the epitaxial layer 3, which is depressed from a surface 31 of the epitaxial layer 3 and a deepest part of which reaches the drain region 4; forming a P-type body region 5 lateral to the gate trench 6; forming an Nsource region 9 which contacts the body region 5 in a surface layer of the epitaxial layer 3; burying a gate electrode 8 in the gate trench 6 via a gate insulation film 7; and forming P-type regions 11 isolated from each other from a bottom face 62 of the gate trench 6 in a layer thickness direction of the epitaxial layer 3 in the drain region 4. |
