| 摘要 |
Included are: a silicon substrate; a pair of finger electrodes connected to a P-type diffusion layer and an N-type diffusion layer respectively, which are formed in a first surface of the silicon substrate; an inner-part passivation layer that gives insulation between the pair of finger electrodes; a connecting area for connection with an outer part, in a gathering part where finger parts of one of the pair of finger electrodes gather; and a barrier part that is, within that connecting area, formed along tip ends of the finger parts of the other of the pair of finger electrodes, a polarity of the other being different from that of the one of the pair of finger electrodes of the connecting area. |
