发明名称 HIGH PRESSURE, HIGH POWER PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
摘要 HIGH PRESSURE, HIGH POWER PLASMA ACTIVATED CONFORMAL FILM DEPOSITIONAbstract Methods and apparatus for depositing a film on a substrate surfaceincluding plasma assisted surface mediated reactions in which a film isgrown over one or more cycles of reactant adsorption and reaction areprovided. The embodiments disclosed herein relate to methods and apparatusfor performing conformal film deposition and atomic layer depositionreactions that result in highly uniform films with low particlecontamination. According to various embodiments, the methods and apparatusinvolve high deposition chamber pressures and plasma generation using highradio frequency powers. FIG. 3
申请公布号 SG196762(A1) 申请公布日期 2014.02.13
申请号 SG20130058540 申请日期 2013.07.30
申请人 NOVELLUS SYSTEMS, INC. 发明人 SWAMINATHAN SHANKAR;PASQUALE, FRANK;LAVOIE, ADRIEN;LEESER, KARL
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