SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and the like which can reduce current collapse.SOLUTION: A semiconductor device comprises: a first semiconductor layer 11; a second semiconductor layer 12 forming hetero junction with the first semiconductor layer 11; a source electrode 21 contacting a part of a surface of the second semiconductor layer 12; a drain electrode 22 which contacts a part of the surface of the second semiconductor layer 12 and is isolated from the source electrode 21; a p-type third semiconductor layer 13 which contacts a part of the surface of the second semiconductor layer 12, is located between the source electrode 21 and the drain electrode 22 and is isolated from both of the source electrode 21 and the drain electrode 22; and a silicon oxide film layer 14 which contacts the surface of the second semiconductor layer 12 between the drain electrode 22 and the third semiconductor layer 13. A natural oxide film of the second semiconductor layer 12 does not exist between the surface of the second semiconductor layer 12 and the silicon oxide film layer 14.