| 摘要 |
According to one embodiment, a storage unit with multiple memory cells that store data, and a bit-line switch circuit. The bit-line switch circuit is connected to a word line that is connected to the bit line, the source line, and the control gate of the memory cell, which is connected to both ends of the string, in order to write and to read out data from each memory cell. The bit-line wiring that is connected to the bit-line switch circuit is arrayed via a disconnection part into a high potential side wiring part including the bit-line wiring on the high potential side and a low potential side wiring part including the bit-line wiring on the low potential side. In the disconnection part is a dummy wiring part that is in a floating state. |
