DRIVING METHOD OF NONVOLATILE MEMORY ELEMENT AND NONVOLATILE STORAGE

摘要

PROBLEM TO BE SOLVED: To provide a driving method of a resistance-change type nonvolatile memory element capable of increasing the information storing performance.SOLUTION: The driving method of a resistance-change type nonvolatile memory element includes: a step to determine whether the current value flowing on a nonvolatile memory element is a first verify level IRL (Verify) or more; a step to determine whether the current value flowing on the nonvolatile memory element is a second verify level IRH (Verify) or less; and a step to define a current reference level Iref to a value that satisfies (IRL(Verify)+IRH(Verify))/2