SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

This method for manufacturing a silicon-carbide semiconductor device (100) has the following steps: a silicon-carbide substrate (10) is prepared; a first heating step in which said silicon-carbide substrate (10) is heated in an oxygen atmosphere is performed; after said first heating step, a second heating step in which the silicon-carbide substrate (10) is heated to a temperature of 1,300-1,500°C in a gaseous atmosphere containing nitrogen atoms or phosphorus atoms is performed; and after said second heating step, a third heating step in which the silicon-carbide substrate (10) is heated in a first inert-gas atmosphere is performed. This allows the provision of a silicon-carbide semiconductor device (100) having low threshold-voltage variation and a manufacturing method therefor.