FINFET AND METHOD FOR MANUFACTURE THEREOF

摘要

A Fin-type transistor (FInFET) and manufacturing method thereof. The FinFET (104) comprises: a semiconductor substrate (101); a stress effect layer (102) on the semiconductor substrate; a semiconductor fin (103') on the stress effect layer and the semiconductor fin comprises two side walls extending along the length direction of semiconductor fin; a gate dielectric layer (106) on the side wall of semiconductor fin; a gate conductor layer (109) on the gate dielectric layer; a source area and a drain area in two bottoms of the semiconductor fin, wherein the stress effect layer under semiconductor fin is parallel to extending along with the semiconductor fin, to make stress effect layer put stress on semiconductor fin, along length direction of semiconductor fin.