发明名称 |
METHOD OF PREVENTING PROGRAM-DISTURBANCES FOR A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A method of preventing program-disturbances for a non-volatile semiconductor memory device having a plurality of memory cells of which each includes a selection transistor and a memory transistor coupled in series between a bit-line and a common source-line is provided. First non-selected memory cells that share a first selection-line with a selected memory cell, and second non-selected memory cells that do not share the first selection-line with the selected memory cell are determined when the selected memory cell is selected to be programmed among the memory cells. A negative voltage is applied to second selection-lines that are coupled to the second non-selected memory cells when the selected memory cell is programmed by applying a positive voltage to the first selection-line that is coupled to the selected memory cell. |
申请公布号 |
US2014043896(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201313939611 |
申请日期 |
2013.07.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WEON-HO;KWON HYOK-KI;KIM MIN-SUP;KIM MIN-SU;KIM BYOUNG-HO;KIM EUI-YEOL;PARK SANG-HOON;PARK JI-HOON;SUNG MIN-JEE;SIM HYO-SOUNG;JEON CHANG-MIN;JEON HEE-SEOG |
分类号 |
G11C16/34 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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