| 摘要 |
<p>In one embodiment of the present invention, a plasma etching method includes a plasma processing step in which the surface of a photoresist that has been formed in a prescribed pattern is subjected to plasma processing using a plasma of a hydrogen-containing gas. In the embodiment, the plasma etching method includes an etching step in which a silicon-containing film is etched using a CF gas and a gas containing a CHF gas with the plasma-treated photoresist being used as a mask. In the embodiment, the plasma etching method includes repeating the plasma processing step and the etching step at least twice.</p> |
