Method for programming non-volatile memory device i.e. flash memory device, utilized as storage medium of solid state drive in e.g. electronic device, involves simultaneously programming data to multi-level-memory cells of physical side

摘要

The method involves receiving data, and partitioning the data based on single-bit-side capacitance of physical sides for producing partitioned data in a memory cell-array (110). The partitioned data is programmed as single-bit-data to the physical sides. The partitioned data is stored in a logical side of the physical sides as least-significant-bit-data. Another data is received, and the latter data is programmed as multi-bit-data to one of physical sides, where the latter data is simultaneously programmed to multi-level-memory cells i.e. charge trap flash memory cells, of the physical side. Independent claims are also included for the following: (1) a data management method for non-volatile memory (2) a memory system.