| 摘要 |
A semiconductor buffer structure may include a silicon substrate and a buffer layer that is formed on the silicon substrate. The buffer layer may include a first layer, a second layer formed on the first layer, and a third layer formed on the second layer. The first layer may include AlxInyGa1-x-yN (0@x@1, 0@y@1, 0@x+y@1) and have a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer may include AlxInyGa1-x-yN (0@x<1, 0@y<1, 0@x+y<1) and have a lattice constant LP2 that is greater than the lattice constant LP1 and smaller than the lattice constant LP0. The third layer may include AlxInyGa1-x-yN (0@x<1, 0@y<1, 0@x+y<1) and have a lattice constant LP3 that is greater than the lattice constant LP1 and smaller than the lattice constant LP2. |
